Bipolar Transistors / Scr
Bipolar Transistors / Scr Model No: SOT-23/TO-92/TO-220/SCR/VOLTAGE REGULATO Following are some types of our transistors product.If any item is interested to you, please kindly inform, we will be very pleased to supply all our ...
Transistor
Transistor Model No: transistor Exporter all kind electronic components. Especially in integrated circuit, semiconductor, resistor, electrolytic cap, our main product as below: * ...
Transistor Series
Transistor Series Model No: Transitor series Our IC department make coorperation with Broadcom, ON, NS, ST, TI, Philips, Fairchild, Wisdom. We can help our customers to cost down and short the delivery ...
IGBT Toshiba MG150J2YS50
IGBT Toshiba MG150J2YS50 Model No: Toshiba MG150J2YS50 For Sales IGBT Toshiba MG150J2YS50, Qty 300 Date Code 0G 2000 ...
PCB Thru Hole Component Manual Insertion Time Values
PCB Thru Hole Component Manual Insertion Time Values Model No: The Standards Guide As an adjunct to our manufacturing productivity systems, we have a special service for companies who wish to undertake the improvement program themselves ...
Philips Transistors
Philips Transistors Model No: BFG520 BFG540 BFG135 BFG97 BFG198 BFG591 We have the hot stock of transistors with original Philips, NEC, ON, NS brand etc.. Part Number Brand Package Quantity BFG540 Philips SOT143 102 KPCS ...
2SB1560/2SD2390 Silicon PNP/NPN Darlington Transistor Wafer
Specifications:
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>
TIP142/TIP147 Silicon NPN/PNP Darlington Transistor Wafer
Specifications:
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>
TIP132/TIP137 Silicon NPN/PNP Darlington Transistor Wafer
Specifications:
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>
TIP122/TIP127 Silicon NPN/PNP Darlington Transistor Wafer
Specifications:
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>
1) High power resistance for second breakdown,
2) High current gain,
3) Low V<sub>CE (SAT)</sub>